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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1733

Title: シリコン基板上窒化物半導体の高品質化に関する研究
Other Titles: シリコン キバン ジョウ チッカブツ ハンドウタイ ノ コウヒンシツカ ニ カンスル ケンキュウ
Growth of high quality III-nitrides on silicon substrate
Authors: 澤木, 宣彦
岩田, 博之
川北, 将吾
本田, 善央
SAWAKI, Nobuhiko
IWATA, Hiroyuki
HONDA, Yoshio
Issue Date: 5-Sep-2011
Publisher: 愛知工業大学
Abstract: Growth of a high quality GaN on a silicon substrate has been attempted. In order to prevent Ga-Si reaction at high temperatures, an AlInN alloy was tested as the intermediate layer between the GaN grown layer and the Si substrate. It was found that a film as thin as 6nm reduces the threading dislocation density in the GaN top layer. In a carbon doped AlGaN on Si, FTIR spectra showed a new specific signal at 945cm-1 following a strong signal at 888cm-1 due to Al-N bond. The new signal was attributed to the LVM due to Al-C bond. This suggests that the carbon has been doped on the nitrogen site to be an acceptor in the AlGaN.
URI: http://hdl.handle.net/11133/1733
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