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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/984

Title: p型Czochralski成長シリコンウェーハのDLTS評価
Other Titles: pガタ Czochralski セイチョウ シリコン ウェーハ ノ DLTS ヒョウカ
Deep-level transient spectroscopy studies of p-type Czochralski-grown silicon wafers
Authors: 加藤, 勇夫
徳田, 豊
KATO, Isao
TOKUDA, Yutaka
Issue Date: 31-Mar-1996
Publisher: 愛知工業大学
Abstract: Hole traps in boron doped p-type Czochralski-grown (100) silicon wafers have been studied by deep-level transient spectroscopy. Three hole traps of E_V+0.10eV(H1), E_V+0.42eV(H2) and E_V+0.44eV(H3) are observed. Their concentration is in the range 10^<10>-10^<13> (cm)^<-3>. Trap H2,H3 are annealed out in the temperature range 300℃-350℃. Trap H1 is probably associated iron-boron complex, since its hole thermal emission data coincide with those of iron-boron complex. However, the origins of trap H2,H3 are still unknown.
URI: http://hdl.handle.net/11133/984
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