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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/859

Title: X線光電子分光法によるGaAs表面の評価
Other Titles: Xセン コウデンシ ブンコウホウ ニヨル GaAs ヒョウメン ノ ヒョウカ
Evaluation of GaAs Surfaces by X-ray Photoelectron Spectroscopy
Authors: 徳田, 豊
鈴木, 均
井上, 彌治郎
TOKUDA, Yutaka
SUZUKI, Hitoshi
INOUE, Yajiro
Issue Date: 31-Mar-1991
Publisher: 愛知工業大学
Abstract: X-ray photoelectron spectroscopy has been used to study GaAs surfaces which recieved treatments in solution with a composition of H_2O : HF(50%)=10 : 1 and NH_4 OH (28%) solution. Ga_2O_3 is almost removed by the above treatments which covers GaAs surfaces without treatments. As_2O_3 is dominant on GaAs surfaces without treatments. Elemental As and As-Ga bonding are dominant after HF and NH_4OH treatments, respectively, which indicates the different etching mechanism between them. The depth profiles accomplished by Ar ion sputtering are also shown.
URI: http://hdl.handle.net/11133/859
Appears in Collections:26号

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