SiCウェハ内部のパルスレーザ照射痕の観察

Abstract

SiC is well known as hard-to-process material. High-speed and low-cost slicing and dicing technology became urgent need in power semiconductor industries. Laser abrasion technology has been developed because it is a dry and non-contact process. However，it also has demerit of debris pollution and thermal damage that leads to degradation of semiconductor device properties. In order to resolve these requirements，we tried to cleave SiC wafier by pulse laser irradiation. The sample surface and the internal structure after the laser irradiation was observed with a microscope.