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http://hdl.handle.net/11133/3130
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Title: | Si基板上GaNのPLスペクトルへの熱処理効果 |
Other Titles: | Si キバンジョウ GaN ノ PL スペクトル エノ ネツ ショリ コウカ Effect of rapid thermal annealing on PL spectra of a GaN grown on Si substrate |
Authors: | 澤木, 宣彦 小林, 宙主 神谷, 俊輝 亀井, 亮吾 入江, 将嗣 本田, 善央 天野, 浩 安, 亨洙 SAWAKI, Nobuhiko KOBAYASHI, Hiroyuki KAMIYA, Toshiki KAMEI, Keigo IRIE, Masatsugu HONDA, Yoshio AMANO, Hiroshi AHN, H-S |
Issue Date: | 23-Sep-2016 |
Publisher: | 愛知工業大学 |
Abstract: | The behavior of photoluminescence spectra under rapid thermal annealing (RTA) was investigated in a GaN epilayer grown on a ( 111 )Si. High optical quality of the GaN layer had been achieved by using an In doped AlN nucleation layer and a low temperature grown AlInN buffer layer; a high band edge emission and low intensities of mid-gap emissions. It was found that the green and yellow emission bands are not influenced much by the RTA up to 700℃,while the blue emission band at 450nm is enhanced by RTA at temperatures higher than 500℃. The possible origin and mechanism of the enhancement were discussed in terms of un-intentionally doped hydrogen. |
URI: | http://hdl.handle.net/11133/3130 |
Appears in Collections: | 18号
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