Si基板上GaNのPLスペクトルへの熱処理効果

Abstract

The behavior of photoluminescence spectra under rapid thermal annealing (RTA) was investigated in a GaN epilayer grown on a ( 111 )Si. High optical quality of the GaN layer had been achieved by using an In doped AlN nucleation layer and a low temperature grown AlInN buffer layer; a high band edge emission and low intensities of mid-gap emissions. It was found that the green and yellow emission bands are not influenced much by the RTA up to 700℃，while the blue emission band at 450nm is enhanced by RTA at temperatures higher than 500℃. The possible origin and mechanism of the enhancement were discussed in terms of un-intentionally doped hydrogen.