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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/3130

Title: Si基板上GaNのPLスペクトルへの熱処理効果
Other Titles: Si キバンジョウ GaN ノ PL スペクトル エノ ネツ ショリ コウカ
Effect of rapid thermal annealing on PL spectra of a GaN grown on Si substrate
Authors: 澤木, 宣彦
小林, 宙主
神谷, 俊輝
亀井, 亮吾
入江, 将嗣
本田, 善央
天野, 浩
安, 亨洙
SAWAKI, Nobuhiko
KAMIYA, Toshiki
KAMEI, Keigo
IRIE, Masatsugu
HONDA, Yoshio
AMANO, Hiroshi
Issue Date: 23-Sep-2016
Publisher: 愛知工業大学
Abstract: The behavior of photoluminescence spectra under rapid thermal annealing (RTA) was investigated in a GaN epilayer grown on a ( 111 )Si. High optical quality of the GaN layer had been achieved by using an In doped AlN nucleation layer and a low temperature grown AlInN buffer layer; a high band edge emission and low intensities of mid-gap emissions. It was found that the green and yellow emission bands are not influenced much by the RTA up to 700℃,while the blue emission band at 450nm is enhanced by RTA at temperatures higher than 500℃. The possible origin and mechanism of the enhancement were discussed in terms of un-intentionally doped hydrogen.
URI: http://hdl.handle.net/11133/3130
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