窒化物太陽電池の高効率化

Abstract

"A single junction InGaN solar cell is investigated numerically. It was found that use of intemal electric field is effective to overcome the short carrier life time and diffusion length. By the virtue of drift motion of photo-generated carriers induced by the intemal built-in field, the collection efficiency in the p-type top layer is improved more than several ten times. As the result， more than one order of magnitude improvement was achieved in the conversion efficiency."