AIT Associated Repository of Academic Resources >
A.研究報告 >
A2 総合技術研究所研究報告 >
16号 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11133/2841
|
Title: | Si基板上高品質GaNの光学スペクトル |
Other Titles: | Si キバンジョウ コウヒンシツ GaN ノ コウガク スペクトル "Optical spectra of a high quality GaN grown on Si substrate" |
Authors: | 澤木, 宣彦 伊藤, 翔悟 小林, 宙主 刑部, 勇希 入江, 将嗣 本田, 善央 天野, 浩 安, 亨洙 SAWAKI, Nobuhiko ITO, Syogo KOBAYASHI, Hiroyuki OSAKABE, Yuki IRIE, Masatsugu HONDA, Yoshio AMANO, Hiroshi AHN, H-S |
Issue Date: | 30-Sep-2014 |
Publisher: | 愛知工業大学 |
Abstract: | "Optimization of the MOVPE growth processes of GaN on Si substrate has been attempted to improve the crystalline/optical properties at room temperature. It was found that the yellow luminescence band is suppressed substantially by adopting an AIInN buffer layer and an In doped AIN nucleation layer. The photoluminescence spectra showed strong and narrow edge emission peak. As far as the subband gap defect related emission band, four spectral peaks were found out at ; 514.5 nm (2.410eV), 546.5 nm (2.269eV), 553.5 nm (2.240eV), and 584.5 nm (2.121eV). The spectral peak energies were independent of the growth methods/conditions and the emission is attributed to the transition associated with an intrinsic defect in GaNas Ga vacancy." |
URI: | http://hdl.handle.net/11133/2841 |
Appears in Collections: | 16号
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|