Si基板上高品質GaNの光学スペクトル

Abstract

"Optimization of the MOVPE growth processes of GaN on Si substrate has been attempted to improve the crystalline/optical properties at room temperature. It was found that the yellow luminescence band is suppressed substantially by adopting an AIInN buffer layer and an In doped AIN nucleation layer. The photoluminescence spectra showed strong and narrow edge emission peak. As far as the subband gap defect related emission band, four spectral peaks were found out at ; 514.5 nm (2.410eV), 546.5 nm (2.269eV), 553.5 nm (2.240eV), and 584.5 nm (2.121eV). The spectral peak energies were independent of the growth methods/conditions and the emission is attributed to the transition associated with an intrinsic defect in GaNas Ga vacancy."