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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/2782

Title: Si 基板上に成長した半極性GaNの欠陥構造評価
Other Titles: Si キバンジョウ ニ セイチョウシタ ハンキョクセイ GaN ノ ケッカン コウゾウ ヒョウカ
Defect Structure in a Semi-polar GaN grown on an Si Substrate
Authors: 澤木, 宣彦
中北, 太平
伊藤, 翔梧
岩田, 博之
谷川, 智之
本田, 善央
山口, 雅史
天野, 浩
SWAKI, Nobuhiko
ITO, Syogo
IWATA, Hiroyuki
TANIKAWA, Tomoyuki
HONDA, Yoshio
AMANO, Hiroshi
Issue Date: 30-Sep-2013
Publisher: 愛知工業大学
Abstract: Defect structure on the coalescene of semipolar (1-101 )GaN grown on a pattemed Si substrate was investigated using high resolution transmission electron microscopy. The reduction of threading dislocation density was achieved by facet based growth mode on AIN nucleation layer, while the reduction of stacking faults density wa achieved by transition of multiple stacking errors to a single stacking erτor during the off-axis growth.
URI: http://hdl.handle.net/11133/2782
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