Si 基板上に成長した半極性GaNの欠陥構造評価

Abstract

Defect structure on the coalescene of semipolar (1-101 )GaN grown on a pattemed Si substrate was investigated using high resolution transmission electron microscopy. The reduction of threading dislocation density was achieved by facet based growth mode on AIN nucleation layer， while the reduction of stacking faults density wa achieved by transition of multiple stacking errors to a single stacking erτor during the off-axis growth.