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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/2140

Title: HEM構造を用いた半導体量子ドットレーザの単一モード発振
Other Titles: HEM コウゾウ オ モチイタ ハンドウタイ リョウシ ドット レーザ ノ タンイツ モード ハッシン
Single mode laser operation of semiconductor quantum dot using HEM structure.
Authors: 五島, 敬史郎
津田, 紀生
山田, 諄
小森, 和弘
天野, 健
GOSHIMA, Keishiro
TSUDA, Norio
KOMORI, Kazuhiro
AMANO, Takeru
Issue Date: 31-Mar-2013
Publisher: 愛知工業大学
Abstract: We propose a quantum dot (QD) laser with the half-etching mesa distributed feedback (HEM-DFB) structure, fabricated by single-step dry etching. The HEM-DFB structure provides several advantages, such as a low scattering loss, wavelength stability and so on. In this study, we achieved wavelength stability control of two mode emission peaks generated by HEM-DFB structure using improved Cl2 dry etching. Also, we demonstrated low threshold current of 23 mA and higher thermal stability of 0.077 nm/K at a 1.3-μm emission by the improved HEM-DFB structure
URI: http://hdl.handle.net/11133/2140
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