シリコン基板上GaNの高分解TEM観察

Abstract

Growth of a high quality GaN on a silicon substrate has been attempted. In order to prevent Ga-Si reaction at high temperatures，an AlInN alloy was tested as the intermediate layer between the GaN grown layer and the Si substrate. It was found that growth of thin AlN layer followed by the growth of AlInN intermediate layer could improve crystalline quality of the GaN top layer. The density of threading dislocation as well as point defect are reduced substantially. High resolution (HR-) TEM analyses showed that the AlN layer has been grown on Si substrate introducing misfit dislocation. Moreover，the AInN layer has also been grown epitaxially introducing misfit dislocations as predicted by nominal lattice constants at room temperature.