カーボンナノチューブを用いた高アスペクト比ナノ加工とTEM内その場観察による加工原理の解明

Abstract

We have developed a fabrication method for a high-aspect-ratio nanometer-scale pit using a carbon nanotube as a scanning tunneling microscope probe. Nanometer-scale pits were fabricated on low-resistivity single crystal silicon in an ambient pressure and room temperature. The results of our experiment show that the shape fabricated was changed from the pit to the mound increasing with the bias voltage. Furthermore，we tried to fabricate the nanometer-scale line fabrications with high-aspect-ratio. The process mechanism of the nanofabrication by STM method was also tried to clarify byTEM in-situ observations during fabrication process. The field evaporation of the specimen around the probe was observed without dislocations and strains. Therefore，the physical origin of this nanometer-scale fabrication using STM was considered to be the field evaporation mechanism.