活性層に導電性高分子を用いた有機電界効果トランジスタの作製とその性能評価

Abstract

An organic field effect transistor was prepared with poly (3-hexylthiophene) thin film as the semiconductor layer, polyimide thin film as the gate insulating layer and Au as the drain, source and gate electrode. The poly (3-hexylthiophene) and polyimide thin films are fabricated with the solution method. The carrier mobility of the organic field effect transistor prepared is 9.94xl0-3 cm2/Vs. The ON/OFF ratio is 2xl02. As compared with the carrier mobility reported until now, the value of carrier mobility estimated in this paper is excellent. However, the ON/OFF ratio obtained is poor. This may cause either the leakage current in the polyimide thin film to increase in size or the bulk current of poly (3-hexylthiophene) thin film to become large.