RBS/Cを用いた水素イオン注入欠陥の評価

Abstract

High dose Hydrogen implantation (80keV, 5×10^<16>H・cm^<-2>) induce exfoliation phenomena after 500℃ heating. In this study, for making of the influence of impurity clear, the damaged layer in the hydrogen-implanted silicon was observed with cross sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The behaviors of three types of specimens (p++, p and n type, respectively) were compared The quantity of defect is proportional to the concentration of dopant, and it is interesting to note that p++ and p type had a sharp peak in the depth profile, but n type had a broad peakand a second peak in a shallow region.