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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1649

Title: RBS/Cを用いた水素イオン注入欠陥の評価
Other Titles: Evaluation of Hydrogen Induced Defects Using Channeling Rutherford Backscattering Spectroscopy
Authors: 岩田, 博之
清水, 孝延
横井, 久人
石神, 龍哉
伊藤, 慶文
徳田, 豊
高木, 誠
IWATA, Hiroyuki
TOKUDA, Yutaka
TAKAGI, Makoto
Issue Date: 1-Jul-2006
Publisher: 愛知工業大学
Abstract: High dose Hydrogen implantation (80keV, 5×10^<16>H・cm^<-2>) induce exfoliation phenomena after 500℃ heating. In this study, for making of the influence of impurity clear, the damaged layer in the hydrogen-implanted silicon was observed with cross sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The behaviors of three types of specimens (p++, p and n type, respectively) were compared The quantity of defect is proportional to the concentration of dopant, and it is interesting to note that p++ and p type had a sharp peak in the depth profile, but n type had a broad peakand a second peak in a shallow region.
URI: http://hdl.handle.net/11133/1649
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