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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1619

Title: 低温水素イオン注入により導入されたシリコン結晶欠陥の特性分析
Other Titles: テイオン スイソ イオン チュウニュウ ニヨリ ドウニュウ サレタ シリコン ケッショウ ケッカン ノ トクセイ ブンセキ
Defects in Crystalline Silicon Induced by Low Temperature H^+Implantation
Authors: 岩田, 博之
徳田, 豊
高木, 誠
井村, 徹
IWATA, Hiroyuki
TOKUDA, Yutaka
TAKAGI, Makoto
Issue Date: 20-Jul-2003
Publisher: 愛知工業大学
Abstract: In low dose hydrogen implanted sample, meta-stable defects induced by hydrogen implanted have not been observed in silicon implanted at room temperature. We first observed it in n-type silicon which implanted at 109K. One of the meta-stable defects (EM1) was investigated in detail. Consequently, the energy level Ec and electron capture cross section were decided to-0.29eV and 4.7×10^<-15>cm^2, respectively. EM1 was appeared in the condition of minus bias and 240-280K, then it was vanished in the condition of 0V bias and 190-250K. In high dose implanted sample, the exfoliated surface induced by furnace annealing was observed. The quantity of defect is proportional to the concentration of dopant, and it is interesting to note that p++ and p type had a sharp peak in the depth profile, but n type had a broad peak and a second peak in a shallow region. The number of exfoliation was proportional to the dopant concentration. The total exfoliated area (ratio of area). The other hand, the average area of exfoliation was biggest in n type silicon and was in smallest in p++ type. It seems that the average area was not affected bv dooant. while it was affected bv the deoth of exfoliation.
URI: http://hdl.handle.net/11133/1619
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