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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1593

Title: 超高温特異環境トランジスタの開発基礎研究II 
Other Titles: チョウコウオン トクイ カンキョウ トランジスタ ノ カイハツ キソ ケンキュウ II
Development of a Diode in the Condition of High Temperature
Authors: 新宮, 博康
鷲見, 哲雄
内田, 悦行
梅野, 正義
安井, 利定
SHINGU, Hiroyasu
SUMI, Tetsuo
UCHIDA, Yoshiyuki
UMENO, Masayoshi
YASUI, Toshisada
Keywords: electrical connection
heat generation
cuprous oxide
thermoelectromotive force
Issue Date: 30-Jun-2001
Publisher: 愛知工業大学
Abstract: This paper reports on an application of the hot-zone phenomenon caused by the electrical connection of copper wires. The temperature of the copper part of the electrical connection rises and cuprous oxide is formed in the connection. When cuprous oxide is formed, the condition of the boundary between the copper and the cuprous oxide is similar in electrical character to a diode. The resistivity of the cuprous oxide changes over a wide temperature range. The experiments were carried out by making a diode repeatedly on a trial basis and observing the electrical character of the thermoelectromotive force. In conclusion we propose that a new diode is made in the boundary layer of copper and cuprous oxide with the application of hot-zone phenomenon.
URI: http://hdl.handle.net/11133/1593
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