Hイオン注入されたシリコンの欠陥分布観察

Abstract

The fundamental mechanism of the hydrogen exfoliation phenomenon that occurs at the damaged layer in H ion implanted silicon was investigated. A damaged layer formed by high-dose hydrogen implantation in a silicon wafer was observed by cross sectional transmission electron microscopy (XTEM), and (100) defects and (111) defects were visible. Density and size of the defects in the damaged layer were analyzed quantitatively. Although the density and size of (100) defects are almost twice those of (111) defects, the density of (111) defects in the deeper area is greater than the density of (100) defects . Neither the densities nor size of either (100) or 16 (111) defects have any relation with implantation dose in the dose range from 5.0x10^<16> to 8.0x10^<16> [Hcm^<-2>]. The sizes of (111) defects in the deeper area approach a certain size (about 10nm), because of their partial combination with (100) defects.