超高温特異環境トランジスタ開発基礎研究

Abstract

This paper reports on an application of the hot zone phenomenon caused by the electric connection of copper wire. The temperature of copper part of the electric connection rises higher and a cuprous oxide is formed in the connection part. When a cuprous oxide is formed, connected condition with copper and cuprous oxide is similar in electric character with a semiconductor. The resistivity of the cuprous oxide changes to 10^<-2>(Ωm) at 700℃ from 10^2 (Ωm) at room temperature. The electric character of boundary layer of the cuprous oxide is similar to that of a transistor. We can conclude that a new transistor are proposed one of the applications of hot zone phenomenon using the boundary layer of copper and cuprous oxide.