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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1586

Title: 超高温特異環境トランジスタ開発基礎研究
Other Titles: チョウコウオン トクイ カンキョウ トランジスタ カイハツ キソ ケンキュウ 
Development of a transistor in the condition of high temperature
Authors: 新宮, 博康
鷲見, 哲雄
秦野, 和郎
内田, 悦行
梅野, 正義
安井, 利定
SHINGU, Hiroyasu 
SUMI, Tetsuo
UCHIDA, Yoshiyuki
UMENO, Masayoshi
YASUI, Toshisada
Issue Date: 30-Jun-2000
Publisher: 愛知工業大学
Abstract: This paper reports on an application of the hot zone phenomenon caused by the electric connection of copper wire. The temperature of copper part of the electric connection rises higher and a cuprous oxide is formed in the connection part. When a cuprous oxide is formed, connected condition with copper and cuprous oxide is similar in electric character with a semiconductor. The resistivity of the cuprous oxide changes to 10^<-2>(Ωm) at 700℃ from 10^2 (Ωm) at room temperature. The electric character of boundary layer of the cuprous oxide is similar to that of a transistor. We can conclude that a new transistor are proposed one of the applications of hot zone phenomenon using the boundary layer of copper and cuprous oxide.
URI: http://hdl.handle.net/11133/1586
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