高ドーズ水素イオン注入シリコンの物性とそのSOI製作への応用

Abstract

Evolutions of hydrogen-implantation-induced defects in silicon with doses have been studied with various kinds of measurement techniques pertinent to the doses applied. In the low dose range (10^<10> cm^<-2>), the DLTS measurements indicate the change of the defect concentration by below-band-gap light illumination. In the middle range (10^<15> cm^<-2>), carrier concentration and hydrogen depth profile measurements reveal the growth of hydrogen-related shallow donors by annealing at around 300 - 500℃. In the high does range (10^<17> cm^<-2>), TEM observation shows the formation of four kinds of defects, that is, point-like defects, <100> platelets, <111> platelets and dislocation-like loops. It is found that the defect structures change into larger defect complexes probably containing hydrogen atoms with doses. These results are useful to fabricate the SOI wafers by hydrogen implantation.