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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1264

Title: DLTS法によるSiCショットキダイオードの電子トラップの評価
Other Titles: DLTS study of electron traps in SiC Schottky diodes
Authors: 中嶋, 紘治
徳田, 豊
TOKUDA, Yutaka
Issue Date: 31-Mar-2005
Publisher: 愛知工業大学
Abstract: Electron traps in commercially available SiC Schottky diodes have been characterized by deep level transient spectroscopy (DLTS). Two discrete DLTS peaks corresponding to the energy levels of EC - 0.16 and 0.67 eV are observed in addition to broader signals with deeper energy levels. The EC - 0.16 and 0.67 levels are identified as the Cr impurity and Z1 center, respectively. A 140% increase in concentration for the Z1 center is found by the 2.5 A forward current stress for 1200 min. The broader signals are resolved by isothermal DLTS and are found to consist of five components with the emission activation energies ranging from 0.71 to 0.85 eV. These five components show the filling pulse width dependence in the s range
URI: http://hdl.handle.net/11133/1264
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