|
AIT Associated Repository of Academic Resources >
A．研究報告 >
A1 愛知工業大学研究報告 >
3．愛知工業大学研究報告 .B(1976-2007) >
33号 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11133/1059
|
| Title: | 一定容量電圧過渡分光法によるバルクGaAs結晶中電子トラップの評価 |
| Other Titles: | イッテイ ヨウリョウ デンアツ カト ブンコウホウ ニヨル バルク GAAS ケッショウチュウ デンシ トラップ ノ ヒョウカ
Evaluation of electron traps in bulk GaAs crystals by Constant-Capacitance Voltage Transient Spectroscopy |
| Authors: | 池田, 幸治
伊藤, 明
徳田, 豊
IKEDA, K.
ITO, Akira
TOKUDA, Yutaka |
| Issue Date: | 31-Mar-1998 |
| Publisher: | 愛知工業大学 |
| Abstract: | We have found that the EL5 and EL6 traps in bulk GaAs are consisted of six traps (A1,A2,A3,A4,A5,A6) from Constant-Capacitance Voltage Transient Spectroscopy (CCVTS) measurement. In this study, we analyze the EL3 and EL2 traps in bulk GaAs by CCVTS, two traps which corresponds to OX and ELO traps are separated from the wave analysis of EL3 and EL2,respectively. The wafers used in this study are not intentionally doped with Oxygen. We discuss the relationship between concentrations of OX and ELO concentration. |
| URI: | http://hdl.handle.net/11133/1059 |
| Appears in Collections: | 33号
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
日本語
