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Please use this identifier to cite or link to this item: http://hdl.handle.net/11133/1059

Title: 一定容量電圧過渡分光法によるバルクGaAs結晶中電子トラップの評価
Other Titles: イッテイ ヨウリョウ デンアツ カト ブンコウホウ ニヨル バルク GAAS ケッショウチュウ デンシ トラップ ノ ヒョウカ
Evaluation of electron traps in bulk GaAs crystals by Constant-Capacitance Voltage Transient Spectroscopy
Authors: 池田, 幸治
伊藤, 明
徳田, 豊
IKEDA, K.
ITO, Akira
TOKUDA, Yutaka
Issue Date: 31-Mar-1998
Publisher: 愛知工業大学
Abstract: We have found that the EL5 and EL6 traps in bulk GaAs are consisted of six traps (A1,A2,A3,A4,A5,A6) from Constant-Capacitance Voltage Transient Spectroscopy (CCVTS) measurement. In this study, we analyze the EL3 and EL2 traps in bulk GaAs by CCVTS, two traps which corresponds to OX and ELO traps are separated from the wave analysis of EL3 and EL2,respectively. The wafers used in this study are not intentionally doped with Oxygen. We discuss the relationship between concentrations of OX and ELO concentration.
URI: http://hdl.handle.net/11133/1059
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