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  <channel rdf:about="http://hdl.handle.net/11133/57">
    <title>DSpace コレクション: 2009-09</title>
    <link>http://hdl.handle.net/11133/57</link>
    <description>2009-09</description>
    <items>
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        <rdf:li rdf:resource="http://hdl.handle.net/11133/1705" />
        <rdf:li rdf:resource="http://hdl.handle.net/11133/1706" />
        <rdf:li rdf:resource="http://hdl.handle.net/11133/1707" />
        <rdf:li rdf:resource="http://hdl.handle.net/11133/1701" />
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    <dc:date>2026-04-26T20:06:04Z</dc:date>
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  <item rdf:about="http://hdl.handle.net/11133/1705">
    <title>カーボンナノチューブ探針を用いた高アスペクト比ナノスケール穴加工法の開発</title>
    <link>http://hdl.handle.net/11133/1705</link>
    <description>タイトル: カーボンナノチューブ探針を用いた高アスペクト比ナノスケール穴加工法の開発
著者: 松室, 昭仁; 高木, 誠
抄録: Fabrication of a high aspect ratio nanoelectromechanical systems (NEMs) and nanodevices is an indispensable challenge as microelectromechanical systems shrink towards the nanoscale. Here, we focus our attention on a fabrication technique that makes use of the scanning tunneling microscope. Additionally, we tried to establish a fabricating method for a nanoscale pit with a high aspect ratio by using carbon nanotube (CNT) as the probe. The nanostructures produced were Au thin films on mica substrates that were prepared by magnetron sputtering. The results of our experiment show that a threshold value exists for the fabrication of the pits between 1V and 2V. The depth and diameter of the pit increased with the increase in the bias voltage and tunnel current, respectively. Consequently, a b ias voltage of 3V and tunnel current of 4 nA were found to be the optimum conditions for a high aspect ratio nanoscale pit fabrication up to 4.5. In changing the fabricating time, depth of the pit increased with the increase in fabricating time, with a little change in the diameter of the pit. This demonstrates that CNT probes can be useful for fabricating structures without changing the diameter of nanoscale CNT probe.</description>
    <dc:date>2009-09-23T15:00:00Z</dc:date>
  </item>
  <item rdf:about="http://hdl.handle.net/11133/1706">
    <title>小型・高速応答加速度センサーシステムの開発</title>
    <link>http://hdl.handle.net/11133/1706</link>
    <description>タイトル: 小型・高速応答加速度センサーシステムの開発
著者: 北川, 一敬; 丹野, 英幸
抄録: The aim of the study is to develop a small system and high response acceleration system for forces measurement of rocket, cornering force and impulse of crash car and hypervelocity testing for space vehicle. The acceleration system is mounted on the front nose of pet rocket and accelerated to a speed up to 4G for the experiment. During the experiment, which will last approximately one minute, acceleration data for the rocket is recorded. Results show that rocket axial acceleration increases as axial force increases. The hypervelocity testing for space vehicle will be planed a wind tunnel experiment of ground tests performed in the HIEST high-enthalpy shock tunnel facility.</description>
    <dc:date>2009-09-23T15:00:00Z</dc:date>
  </item>
  <item rdf:about="http://hdl.handle.net/11133/1707">
    <title>活性層に導電性高分子を用いた有機電界効果トランジスタの作製とその性能評価</title>
    <link>http://hdl.handle.net/11133/1707</link>
    <description>タイトル: 活性層に導電性高分子を用いた有機電界効果トランジスタの作製とその性能評価
著者: 落合, 鎮康; 小嶋, 憲三
抄録: An organic field effect transistor was prepared with poly (3-hexylthiophene) thin film as the semiconductor layer, polyimide thin film as the gate insulating layer and Au as the drain, source and gate electrode. The poly (3-hexylthiophene) and polyimide thin films are fabricated with the solution method. The carrier mobility of the organic field effect transistor prepared is 9.94xl0-3 cm2/Vs. The ON/OFF ratio is 2xl02. As compared with the carrier mobility reported until now, the value of carrier mobility estimated in this paper is excellent. However, the ON/OFF ratio obtained is poor. This may cause either the leakage current in the polyimide thin film to increase in size or the bulk current of poly (3-hexylthiophene) thin film to become large.</description>
    <dc:date>2009-09-23T15:00:00Z</dc:date>
  </item>
  <item rdf:about="http://hdl.handle.net/11133/1701">
    <title>高圧型アンモニア/活性炭系吸着式ヒートポンプに適用する吸着器の開発</title>
    <link>http://hdl.handle.net/11133/1701</link>
    <description>タイトル: 高圧型アンモニア/活性炭系吸着式ヒートポンプに適用する吸着器の開発
著者: 渡辺, 藤雄; 架谷, 昌信; 小林, 敬幸
抄録: The adsorption heat pump system is considered to be one of the leading technologies for utilizing low temperature thermal energy, because it can generate cold heat energy at around 283 K for air conditioning without any mechanical power by utilizing low temperature heat as the regeneration heat source of an adsorbent. Many theoretical and experimental studies have already been conducted with the objective of enhancing the cold-heat output of the adsorption heat pump system. However, there are still some problems in the practical use of the adsorption heat pump system. The most serious problem is that the small cold heat output per unit volume of the adsorption heat pump，and its reasons were the bad vapor diffusion and heat transfer in the adsorption layer. For increasing the cold heat output, we have considered ammonia/SAC combination adsorption heat pump from the viewpoint of the promoting the vapor diffusion. We modeled in the heat transmission and the vapor diffusion of the adsorption layer, and estimated them. The result indicated that ammonia heat pump has the very good vapor diffusion，and the only heat transmission is rate-controlling step in the ammonia adsorption heat pump.</description>
    <dc:date>2009-09-23T15:00:00Z</dc:date>
  </item>
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